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ROM cell of ROM memory provides first given potential or second given potential in accessed state cell output depending on programming condition of ROM cell

机译:ROM存储器的ROM单元根据ROM单元的编程条件在访问状态单元输出中提供第一给定电位或第二给定电位

摘要

The ROM cell of ROM memory provides first given potential (VDD) or second given potential (GND) in the accessed state at cell output depending on programming condition. The signal output of the control element (N-MOS) is connected with the cell output. The control element has a control input, which is fed with control signal. Independent claims are also included for the following: (A) ROM memory with arrangement of ROM cells; and (B) Programming the ROM cell.
机译:ROM存储器的ROM单元根据编程条件在单元输出处在访问状态下提供第一给定电势(VDD)或第二给定电势(GND)。控制元件(N-MOS)的信号输出与单元输出相连。该控制元件具有控制输入,该控制输入被馈送控制信号。还包括以下方面的独立权利要求:(A)具有ROM单元排列的ROM存储器; (B)对ROM单元进行编程。

著录项

  • 公开/公告号DE102004056459A1

    专利类型

  • 公开/公告日2006-06-14

    原文格式PDF

  • 申请/专利权人 INFINEON TECHNOLOGIES AG;

    申请/专利号DE20041056459

  • 发明设计人 NIRSCHL THOMAS;OSTERMAYR MARTIN;

    申请日2004-11-23

  • 分类号G11C17/10;G11C17/12;

  • 国家 DE

  • 入库时间 2022-08-21 21:20:36

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