Capacitive structure for semiconductor technology in e.g. consumer electronics, industries and automobile electronics has trench which adjoins trough zone, which forms second electrode of capacitive structure, formed in semiconductor body

摘要

Capacitive structure has trench (3) which adjoins to a surface (2) of semiconductor body (1). An adjacent isolation layer (4) is arranged within trench and semiconductor body. Trench adjoins trough zone (6), formed in semiconductor body, from first type of conductivity inversed to second type of conductivity. The trough zone forms second electrode of capacitive structure. An independent claim is also included for: the manufacture of the capacitive structure.