Semiconductor device, e.g. insulated gate bipolar transistor, has floating area including penetration depth in drift areas, where depth corresponds to another two penetration depths of base areas and trenches

摘要

Semiconductor device has a semiconductor body between front and rear side contacts with front and rear side surfaces. Control electrodes are embedded against base areas (3) in trenches, such that current flow between emitter areas (9) and drift areas is controllable by the electrodes. A floating area (5) has a penetration depth in the drift areas, where the depth corresponds to another two penetration depths of the base areas and the trenches.