Semiconductor storage cell for ferroelectric RAM, has ferroelectric storage material region formed as condenser dielectric medium between two electrodes whose external contact regions are made of metal oxide

摘要

The storage cell has two electrodes (14, 18) between which a ferroelectric storage material region (16) is formed as a condenser dielectric medium. A dielectric contact region of each electrode contacts the storage material region. Contact switching regions of the electrodes are connected between respective external contact regions and dielectric contact regions. The regions of the electrodes are made of metal oxide. Independent claims are also included for the following: (1) a semiconductor storage device including a number of semiconductor storage cells (2) a method for manufacturing of a semiconductor storage cell.