Gas sensor with field effect transistor, has porous gas sensitive layer directly applied to insulation of FET located directly above channel region

摘要

A gas sensor includes an open-pore gas-sensitive layer (8) whose electrical characteristics are read by a FET (11). The sensitive layer is applied directly to the insulation of the FET, passing around an air gap. The insulation is located directly above the channel region of the FET or cooperates indirectly with the FET via a floating gate electrode (20). An independent claim is included for operating a gas sensor.