首页> 外国专利> Semiconductor memory unit e.g. dynamic RAM, has I/O skip unit that is erased, when memory cells assigned to data lines are identified as non-functional, and erased skip unit forces error free signal to PF-signal line

Semiconductor memory unit e.g. dynamic RAM, has I/O skip unit that is erased, when memory cells assigned to data lines are identified as non-functional, and erased skip unit forces error free signal to PF-signal line

机译:半导体存储单元动态RAM,当分配给数据线的存储单元被识别为无效时,具有擦除的I / O跳过单元,并且擦除的跳过单元将无错误信号强制传递给PF信号线

摘要

The unit has data lines connected with memory cells of data word groups to transmit data bits stored in the cells. Each data line is assigned to an erasable I/O skip unit (50), where the skip unit is erased, when the cells assigned to the data lines are identified as non-functional. The erased unit forces an error free signal to a corresponding PF-signal line. A non-volatile partial identifier is provided to activate each skip unit. An independent claim is also included for a method for testing a semiconductor wafer with semiconductor memory unit.
机译:该单元具有与数据字组的存储单元连接的数据线,以传输存储在单元中的数据位。当分配给数据线的单元被识别为不起作用时,将每个数据线分配给可擦除I / O跳过单元(50),在该单元中擦除该跳过单元。被擦除的单元将无错误信号强制发送到相应的PF信号线。提供了非易失性部分标识符来激活每个跳过单元。还包括用于测试具有半导体存储单元的半导体晶片的方法的独立权利要求。

著录项

  • 公开/公告号DE102005011891B3

    专利类型

  • 公开/公告日2006-09-21

    原文格式PDF

  • 申请/专利权人 INFINEON TECHNOLOGIES AG;

    申请/专利号DE20051011891

  • 发明设计人 HARTMANN UDO;

    申请日2005-03-15

  • 分类号G11C29/38;G11C29/48;

  • 国家 DE

  • 入库时间 2022-08-21 21:20:21

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