Non-volatile memory component, e.g. for portable device such as digital camera. mobile- (cell-) phone etc, has page buffer provided with scanning node selectively joined to bit line

摘要

A non-volatile memory component has a memory cell matrix, and internal data output line for outputting data, and a page buffer between a bit-line of the memory cells matrix and the internal data line the page buffer being provided with a scanning node which is selectively joined to the bit line. A temporary store is selectively joined to the scanning node at a temporary store input path which adjusts a logic voltage of the temporary store, and to a temporary store output path which is separated from the temporary store input path and adjusts a logic voltage in dependence on the logic voltage of the temporary store node. An independent claim is included for a page buffer for a non-volatile memory component.