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Precursor compound containing a to hfcl4 bound nitrogen compound for the formation of a hafnium oxide layer and a process for forming the hafnium oxide layer with the use of the precursor compound
Precursor compound containing a to hfcl4 bound nitrogen compound for the formation of a hafnium oxide layer and a process for forming the hafnium oxide layer with the use of the precursor compound
A hafnium oxide precursor and a method for forming a hafnium oxide layer using the precursor are provided. The hafnium oxide precursor contains a nitrogen compound bound to HfCl4.
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