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bolometer with a absorptionsschicht from a material with a low thermal conductivity and a low ablagerungstemperatur

机译:具有低热导率和低耐高温性的材料的吸收计的辐射热计

摘要

A three-level infra-red bolometer (200) includes an active matrix level (210), a support level (220), a pair of posts (270) and an absorption level (230). The active matrix level (210) includes a substrate (212) having an integrated circuit, a pair of connecting terminals (214) and a protective layer (216) covering the substrate. The support level (220) includes a pair of bridges (240), each of the bridges being provided with a conduction line (265) formed on top thereof, wherein one end of the conduction line (265) is electrically connected to the respective connecting terminal (214). The absorption level (230) includes a serpentine bolometer element (285) surrounded by an absorber (295) made of silicon oxide (SiO2) or silicon oxy-nitride (SiOxNy). Each of the posts (270) includes an electrical conduit (272) surrounded by an insulating material (274) and is placed between the absorption level (230) and the bridge (240), in such a way that the serpentine bolometer element (285) is electrically connected to the integrated circuit through the electrical conduit (272), the conduction line (265) and the connecting terminal (214).
机译:三级红外辐射热测量计(200)包括有源矩阵级(210),支撑级(220),一对支柱(270)和吸收级(230)。有源矩阵层(210)包括具有集成电路的基板(212),一对连接端子(214)和覆盖该基板的保护层(216)。支撑台(220)包括一对桥(240),每个桥在其顶部上形成有导线(265),其中导线(265)的一端电连接到相应的连接器上。终端(214)。吸收级(230)包括由吸收剂(295)围绕的蛇形辐射热测量元件(285),吸收剂(295)由氧化硅(SiO 2)或氮氧化硅(SiO x N y)制成。每个柱(270)包括由绝缘材料(274)围绕的电导管(272),并以蛇形辐射热测量元件(285)的方式放置在吸收层(230)和桥(240)之间。电路(图1)通过电导管(272),导线(265)和连接端子(214)与集成电路电连接。

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