Photodiode semiconductor device, has electrical connection via traversing intermediate layer and connecting upper electrode to contact stud and well formed outside zone and traversing intermediate layer for uncovering connection stud

摘要

The device has an electrical connection unit disposed below an intermediate layer (9) made of photosensitive diode material, and including an electrical contact stud (7a) and an electrical connection stud (16a). An electrical connection via (14) traverses the intermediate layer and connects an upper electrode to the contact stud. A well (15a) is formed outside a zone and traverses the intermediate layer for uncovering the connection stud. An independent claim is also included for a method for fabricating an optical photodiode semiconductor device.