首页> 外国专利> Semiconductor ROM memory device for storing binary data, has cell with semiconductor electrical connection connecting one of two zones of four active zones, to one of third and fourth zones, based on logic value of binary data in cell

Semiconductor ROM memory device for storing binary data, has cell with semiconductor electrical connection connecting one of two zones of four active zones, to one of third and fourth zones, based on logic value of binary data in cell

机译:用于存储二进制数据的半导体ROM存储设备具有一个单元,该单元具有基于单元中二进制数据的逻辑值将四个活动区域的两个区域之一连接到第三和第四区域之一的半导体电连接

摘要

The device has a cell with 4 active zones (Z1-Z4) mutually isolated within a substrate. An electrically conductive connection (P34) adjacent the substrate connects the zones (Z3, Z4). A semiconductor electrical connection connects one of the zones (Z3, Z4) to one of the zones (Z1, Z2) based on a logic value of a binary data in the cell. A semiconductor electrical isolation isolates the zones (Z3, Z4) from the respective zones (Z1, Z2). The zones (Z1, Z2) are connected to supply voltage and ground, respectively. Independent claims are also included for the following: (1) a method for reading a logic value of a binary data stored in a cell of a memory device (2) a method of programming a binary data in a cell of a memory device.
机译:该器件具有一个单元,该单元具有在基板内相互隔离的4个有源区(Z1-Z4)。邻近基板的导电连接(P34)连接区域(Z3,Z4)。半导体电连接基于单元中二进制数据的逻辑值将区域之一(Z3,Z4)连接到区域之一(Z1,Z2)。半导体电隔离将区域(Z3,Z4)与相应区域(Z1,Z2)隔离。区域(Z1,Z2)分别连接到电源电压和地。还包括以下方面的独立权利要求:(1)一种用于读取存储在存储设备的单元中的二进制数据的逻辑值的方法(2)一种在存储设备的单元中对二进制数据进行编程的方法。

著录项

  • 公开/公告号FR2881566A1

    专利类型

  • 公开/公告日2006-08-04

    原文格式PDF

  • 申请/专利权人 STMICROELECTRONICS SA SOCIETE ANONYME;

    申请/专利号FR20050001007

  • 发明设计人 SCHOELLKOPF JEAN PIERRE;

    申请日2005-02-02

  • 分类号G11C17/10;H01L21/8246;

  • 国家 FR

  • 入库时间 2022-08-21 21:17:15

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