Varying carrier mobility on finfet active surfaces to achieve overall design goals

• 1. 在半导体器件中改变载流子迁移率以达到整体设计目标 [P] . 中国专利： CN1826696B . 2011.01.26
• 2. 在半导体器件中改变载流子迁移率以达到整体设计目标 [P] . 中国专利： CN1826696A . 2006-08-30
• 3. VARYING CARRIER MOBILITY ON FINFET ACTIVE SURFACES TO ACHIEVE OVERALL DESIGN GOALS [P] . 韩国专利： KR101042713B1 . 2011-06-20

  机译： 改变FINFET有源表面上的载具移动性以实现总体设计目标

• 4. Varying carrier mobility on finfet active surfaces to achieve overall design goals [P] . 英国专利： GB2419234B . 2007-02-21

  机译： 在finfet有源表面上改变载流子迁移率以实现总体设计目标

• 5. Varying carrier mobility on finfet active surfaces to achieve overall design goals [P] . 英国专利： GB2419234A . 2006-04-19

  机译： 在finfet有源表面上改变载流子迁移率以实现总体设计目标

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