MASK BLANK FOR EXTREME ULTRAVIOLET RAY EXPOSURE, MASK FOR EXTREME ULTRAVIOLET RAY EXPOSURE, AND PATTERN TRANSFER METHOD

摘要

PROBLEM TO BE SOLVED: To provide an EUV exposure mask capable of securing contrast of a laminate including a capping film and a buffer film laminated on a multilayer film and an absorption film defect to improve defect inspection ability by DUV light.;SOLUTION: The EUV exposure mask includes the multilayer film, the capping film and the buffer film laminated on a substrate, and further includes the absorption film laminated thereon. Reflectivity of the laminate from the multilayer film to the absorption film is 6.7-≤20% in an ultraviolet region with a wavelength of 190-260 nm. The absorption film is formed so that its refractive index gradually increases toward the capping film.;COPYRIGHT: (C)2008,JPO&INPIT