BOAT GROWING METHOD FOR COMPOUND SEMICONDUCTOR CRYSTAL

摘要

PROBLEM TO BE SOLVED: To increase the growing yield of a single crystal for a group III-V compound semiconductor crystal with an n-type conductivity by a boat growing method.;SOLUTION: In the boat growing method, a GaAs semiconductor crystal 9 with the n-type conductivity is grown by controlling temperature distribution in a reaction tube 1 with a heating device after the reaction tube 1 which has a setting section of a boat for crystal growth and for housing Ga or GaAs polycrystal, an As setting section housing As 7 and a diffusion barrier portion 8 by which the setting section of the boat for crystal growth and the As setting section are separated is sealed. Ga₂O₃ is deposited on the diffusion barrier portion 8 while holding the temperature of the diffusion barrier portion 8 to be 700°C or higher and lower than 950°C and the generation reaction of SiO₂ (solid) in GaAs melt 5 is suppressed.;COPYRIGHT: (C)2007,JPO&INPIT