PN JUNCTION DIODE AND METHOD FOR MANUFACTURING PN JUNCTION DIODE

摘要

PROBLEM TO BE SOLVED: To provide a pn junction diode for power devices which comprises GaN nano-columns.;SOLUTION: A pn juction diode for power devices 1a includes a first electrode 4a, a plurality of first nano-columns 6a showing a first couductivity type erected on the surface of the first electrode 4a, a plurality of second nano-columns 8a showing a second couductivity type provided in the each end portion of the plurality of the first nano-columns 6a, a semiconductor portion 12a showing the second conductivity type provided on the plurality of second nano-columns 8a, and a second electrode 14a provided on the semiconductor portion 12a, wherein the first nano-column portion 6a and the second nano-column portion 8a consists of GaN.;COPYRIGHT: (C)2008,JPO&INPIT