PROCESS FOR PRODUCING SILICON QUANTUM POINT ACTIVATION SOLAR LAYER OF SILICON QUANTUM POINT ACTIVATION SOLAR CELL

摘要

PROBLEM TO BE SOLVED: To provide a process for producing the silicon quantum point activation layer of a silicon quantum point activation solar cell in which pairs of electron-hole are generated when sunlight is absorbed and photoelectric conversion efficiency is enhanced.;SOLUTION: A substrate 1 on which an indium tin oxide (ITO) layer 11 and a titanium dioxide (TiO₂) layer 12 are laminated is placed in a reaction chamber and steps of silicon quantum point nucleation layer, growth layer and passivation layer are performed on the surface of the titanium dioxide layer on the substrate by vacuum deposition and a plurality of times of pulses using silane (SiH₄) as precursor and argon as dilution, carrier gas or mixture air thus forming a structure where a plurality of silicon quantum points 21 are grown and distributed directly. On the other hand, a silicon carbide (SiC_x) quantum point thin film 22 is deposited directly by a single pulse in addition to the silicon quantum point structure thus forming a silicon quantum point distribution layer 2 on the surface of the titanium dioxide layer on the substrate.;COPYRIGHT: (C)2007,JPO&INPIT