SILICON QUANTUM DOT ABSORBER LAYERS FOR ALL-SILICON TANDEM SOLAR CELLS: OPTICAL AND ELECTRICAL CHARACTERISATION

摘要

Silicon carbide thin films that incorporate silicon nanocrystals are investigated. The optical band gap of the films is controlled by the deposition and annealing conditions. The band gap of as-deposited films was varied between 2.1 eV and 3 eV. Si_(0.5)C_(0.5) films were successfully doped in-situ with B_2H_6 and conductivities of 5·10~(-5) S/cm to 2·10~(-4) S/cm were obtained. Temperature dependent conductivity shows that the conductivity follows an Arrhenius relation for certain temperature regimes. However, the temperature dependence over a larger temperature range is not Arrhenius-like, which is in agreement with previous results.