SOLUTION FOR ETCHING STACKED FILM OF ALUMINUM-BASED METALLIC FILM AND MOLYBDENUM-BASED METALLIC FILM

摘要

PPROBLEM TO BE SOLVED: To provide an etching solution which can etch a stacked metallic film mainly composed of a molybdenum-based metal and an aluminum-based metal by one operation, and can control a cone angle into 20 to 70 degrees by controlling an etched amount of the side face of each film. PSOLUTION: The etching solution for etching the stacked film of the aluminum-based metal and molybdenum-based metal formed on an insulation film substrate includes: a sulfonic acid compound selected from the group consisting of sulfuric acid, ammonium sulfate, sodium sulfate, potassium sulfate, ammonium bisulfate, sodium bisulfate, potassium bisulfate, calcium sulfate, ceric ammonium sulfate, ferric sulfate, copper sulfate, magnesium sulfate, lead sulphate, hydroxylammonium sulfate, amidosulfonic acid, ammonium amidosulfate, ammonium peroxodisulfate, ethylenediamine sulfate, aniline sulfate and adenine sulfate; phosphoric acid; and nitric acid. PCOPYRIGHT: (C)2007,JPO&INPIT