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METHOD OF MANUFACTURING BURIED SUBSTRATE CRYSTAL AND BURIED SUBSTRATE CRYSTAL

机译:制造潜入基质晶体和潜入基质晶体的方法

摘要

PPROBLEM TO BE SOLVED: To provide a method for manufacturing a single crystal substrate, the method being suitable for manufacturing the single crystal substrate in which a single crystal of a polarity A is formed on at least the surface of a crystal in which parts having different polarities A and B and having opposite structure with respect to the crystal orientation coexist, and a device is fabricated on the single crystal of the polarity A. PSOLUTION: In the crystal in which the parts having the different polarities A and B and each having the opposite direction structure with respect to the crystal orientation coexist, the part having the polarity B is etched to remove the surface part or is covered with a different kind of substance M without removing the surface part, and further, the growth of the same crystal is performed to cover the surface with a crystal A' having the polarity A. PCOPYRIGHT: (C)2007,JPO&INPIT
机译:

要解决的问题:为了提供一种制造单晶衬底的方法,该方法适用于制造其中至少在其中形成有极性A的单晶的晶体的单晶衬底。具有不同极性A和B且相对于晶体取向具有相反结构的部分共存,并且在极性A的单晶上制造器件。

解决方案:在晶体中,具有不同极性A的部分与B和B分别相对于晶体取向具有相反方向的结构并存,具有极性B的部分被蚀刻以去除表面部分,或者在不去除表面部分的情况下被不同种类的物质M覆盖。进行同一晶体的生长以覆盖具有极性A的晶体A'的表面。

版权所有:(C)2007,JPO&INPIT

著录项

  • 公开/公告号JP2007223895A

    专利类型

  • 公开/公告日2007-09-06

    原文格式PDF

  • 申请/专利权人 SUMITOMO ELECTRIC IND LTD;

    申请/专利号JP20070065944

  • 发明设计人 NAKAHATA SEIJI;UEMATSU KOJI;

    申请日2007-03-15

  • 分类号C30B25/20;H01L21/205;C30B29/38;H01L33;

  • 国家 JP

  • 入库时间 2022-08-21 21:13:13

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