Being the manner which forms field-effect transistor structure and its formation mannered null

摘要

PROBLEM TO BE SOLVED: To provide an oxide channel FET structure for incorporating a buried oxide channel by incorporating conductive metallic oxide electrodes for buried source and drain electrodes.;SOLUTION: A method for constructing the oxide electrodes for use in an oxide channel field-effect transistor (OxFET) device is disclosed. The electrodes are formed by first depositing a double layer 130 and 140 of conducting perovskite oxides onto an insulating oxide substrate. A resist pattern with the electrode configuration is then defined over the double layer. The top oxide layer is ion milled to a depth without reaching the substrate. Chemical etching of RIE is used to remove the part of the lower conductive oxide layer. The source and drain electrodes are thereby defined, which can be then used as buried contacts.;COPYRIGHT: (C)2003,JPO