MULTILAYER THIN FILM, METHOD OF MANUFACTURING THIN FILM TRANSISTOR HAVING MULTILAYER THIN FILM AND THIN FILM TRANSISTOR DISPLAY PANEL

摘要

PROBLEM TO BE SOLVED: To improve the characteristics of a thin film transistor and the performance of a display device.;SOLUTION: A polycrystalline silicon film 42 is formed on a substrate 41, and an insulated film 43 having a contact hole 44 exposing the surface of the polycrystalline silicon film is formed on that. On the insulated film, a gate line having an amorphous silicon film 45 and a conductive film 46 is formed, and is connected with the polycrystalline silicon film 42 through the contact hole. Moreover, the insulated film and a data line are formed on the gate line. Thus, the amorphous silicon film 45 is provided to diversify lateral inclination, and the substrate is annealed to improve the adhesive strength between the conductive film 46 and the amorphous silicon film 45. Thereby, contact resistance can be reduced, and the characteristics and reliability of the thin film transistor are improved.;COPYRIGHT: (C)2007,JPO&INPIT