首页> 外国专利> METHOD OF FORMING ORGANIC SEMICONDUCTOR THIN FILM, AND ORGANIC SEMICONDUCTOR THIN FILM, AND ORGANIC ELECTRONIC DEVICE AND ORGANIC FIELD EFFECT TRANSISTOR USING IT

METHOD OF FORMING ORGANIC SEMICONDUCTOR THIN FILM, AND ORGANIC SEMICONDUCTOR THIN FILM, AND ORGANIC ELECTRONIC DEVICE AND ORGANIC FIELD EFFECT TRANSISTOR USING IT

机译:形成有机半导体薄膜,有机半导体薄膜,有机电子器件及有机场效应晶体管的方法

摘要

PROBLEM TO BE SOLVED: To provide an organic semiconductor thin film forming method which can form an organic semiconductor thin film of a large crystal grain.;SOLUTION: The method of forming the organic semiconductor thin film includes a step of converting the thin film of an organic semiconductor precursor having a structure for forming a double bond by desorption into the thin film of the organic semiconductor while crystal growth is performed by moving the inside of a system having a temperature gradient, wherein a moving speed x(mm/s) and the temperature gradient d(°C/mm) in the moving direction satisfy a condition expressed by a formula: 0.001xd1000.;COPYRIGHT: (C)2007,JPO&INPIT
机译:解决的问题:提供一种可以形成大晶粒的有机半导体薄膜的有机半导体薄膜形成方法。解决方案:该有机半导体薄膜的形成方法包括以下步骤:有机半导体前驱体,其结构是通过使具有温度梯度的系统的内部移动来进行,并通过向有机半导体的薄膜中解吸而形成双键,同时通过移动具有温度梯度的系统的内部来进行晶体生长。移动方向上的温度梯度d(°C / mm)满足以下公式表示的条件:0.001

著录项

  • 公开/公告号JP2006339604A

    专利类型

  • 公开/公告日2006-12-14

    原文格式PDF

  • 申请/专利权人 MITSUBISHI CHEMICALS CORP;

    申请/专利号JP20050165922

  • 申请日2005-06-06

  • 分类号H01L21/368;H01L29/786;H01L21/336;H01L51/40;H01L51/05;

  • 国家 JP

  • 入库时间 2022-08-21 21:11:19

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