TRANSISTOR HAVING DIELECTRIC STRESSOR ELEMENTS TO APPLY SHEARING STRESS AT DIFFERENT DEPTHS FROM SEMICONDUCTOR SURFACE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device having dielectric stressor elements and a method for manufacturing the same.;SOLUTION: There is provided a chip including an active semiconductor region and a field effect transistor (FET) having a channel region, a source region, and a drain region, all of which are arranged in the active semiconductor region. The FET has a lengthwise direction in the direction of the length of the channel region and a transverse direction in the direction of the width of the channel region. An embedded dielectric stressor element has an upper surface extending horizontally at a first depth below the main surface of a part of the active semiconductor region, such as an east edge portion of the active semiconductor region. Surface dielectric stressor elements are arranged adjacent to each other in the transverse direction in the active semiconductor region on the main surface of the active semiconductor region. The surface dielectric stressor element extends from the main surface to a second depth substantially not deeper than the first depth. The stresses applied by the embedded dielectric stressor element and the surface dielectric stressor element collaborate in applying shearing stress to the channel region of the FET.;COPYRIGHT: (C)2007,JPO&INPIT