Shallow channel separation (STI) the manner null which restricts the divot formation after the processing

摘要

To provide a method for restricting the formation of (305) in the divots (STI) structure [Problems] shallow trench isolation. [SOLUTION] by oxidizing the steps of providing oxide deposited on (285) a trench formed in a (260) silicon region (290), the upper silicon region (260) silicon regions The method (260 I comprises the steps of forming a thermal oxide layer (302) on the upper surface of) the step of selectively etching the deposited oxide thermal oxide (302) for (290).