首页> 外国专利> COMPOSITION FOR FORMING SILICA-BASED COATING, SILICA-BASED COATING, AND METHOD FOR FORMING SILICA-BASED COATING, AS WELL AS SEMICONDUCTOR DEVICE EQUIPPED WITH SILICA-BASED COATING

COMPOSITION FOR FORMING SILICA-BASED COATING, SILICA-BASED COATING, AND METHOD FOR FORMING SILICA-BASED COATING, AS WELL AS SEMICONDUCTOR DEVICE EQUIPPED WITH SILICA-BASED COATING

机译:用于形成基于二氧化硅的涂层的组合物,基于二氧化硅的涂层,以及用于形成基于二氧化硅的涂层的方法以及配备有基于二氧化硅的涂层的半导体装置

摘要

PPROBLEM TO BE SOLVED: To provide a composition for forming a silica-based coating that is excellent in low dielectric property and can release a substituent group to be eliminated in a shorter heating time as compared to a conventional one, to provide a silica-based coating comprised of the composition and a method for forming the same, as well as to provide a semiconductor device provided with the silica-based coating. PSOLUTION: The composition for forming a silica-based coating comprises a siloxane resin having a Si atom combined with both of a substituent group releasable at a predetermined temperature and a substituent group not releasable at a predetermined temperature, and a solvent that can dissolve the siloxane resin. PCOPYRIGHT: (C)2007,JPO&INPIT
机译:

要解决的问题:提供一种用于形成二氧化硅基涂层的组合物,该组合物与常规的相比,具有低介电性能优异并且可以在较短的加热时间内释放出要消除的取代基的目的。包括该组合物的二氧化硅基涂层及其形成方法,以及提供一种具有该二氧化硅基涂层的半导体器件。

溶液:用于形成基于二氧化硅的涂层的组合物包括具有Si原子的硅氧烷树脂,该硅氧烷原子与在预定温度下可释放的取代基和在预定温度下不可释放的取代基两者结合。溶解硅氧烷树脂。

版权:(C)2007,日本特许厅&INPIT

著录项

  • 公开/公告号JP2007031596A

    专利类型

  • 公开/公告日2007-02-08

    原文格式PDF

  • 申请/专利权人 HITACHI CHEM CO LTD;

    申请/专利号JP20050217936

  • 申请日2005-07-27

  • 分类号C09D183/04;C09D7/12;B32B9;B05D3/02;B05D7/24;H01L21/316;H01L21/312;H01L21/768;

  • 国家 JP

  • 入库时间 2022-08-21 21:10:16

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