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The reluctance effective die magnetometric sensor and structure membrane of the spin valve die enormous reluctance

机译:磁阻有效模磁传感器和旋转阀的结构膜模极大的磁阻

摘要

PROBLEM TO BE SOLVED: To manufacture a spin valve type giant magnetoresistive effect type magnetic sensor, as well as a magnetoresistive effect type magnetic head, which uses an anti- ferromagnetic layer for stabilizing bias, capable of, in a limited manner, electrifying a sense current in the region of high sensitivity. SOLUTION: There are provided a process where a mask layer which comprises a wide head part and a narrow neck part nearer to a base part is formed on a magnetization free layer 14, a process where an antiferromagnetic layer 42 for stabilizing bias to the magnetization free layer 14 is formed from above the mask layer, across the entire surface, by a coating method having directivity in the direction almost vertical to the surface of a component film, a process where an insulating layer 43 is formed from above the mask layer, across the entire surface, by a coating method diagonally incident on the surface of the component film, and a process where the antiferromagnetic layer 42 for stabilizing bias and the insulating layer 43 which stick to the mask layer are selectively removed. A sense current is limitedly electrified in the region where the antiferromagnetic layer 42 for stabilizing bias and the insulating layer 43 are removed, to improve sensitivity and for stabilization.
机译:解决的问题:制造自旋阀型巨型磁阻效应型磁传感器以及磁阻效应型磁头,该磁头使用反铁磁层来稳定偏压,从而能够在有限的范围内使感应带电电流在高灵敏度区域。解决方案:提供了一种在磁化自由层14上形成包括宽头部和靠近基部的窄颈部的掩模层的工艺,其中用于稳定对无磁化的偏压的反铁磁层42通过在几乎垂直于组分膜的表面的方向上具有方向性的涂覆方法,从掩模层上方在整个表面上形成层14,该工艺是从掩模层上方形成绝缘层43。通过斜向入射在成分膜的表面上的涂覆方法,以及选择性地去除用于稳定偏压的反铁磁层42和粘附在掩模层上的绝缘层43的工艺来去除整个表面。在去除用于稳定偏压的反铁磁层42和绝缘层43的区域中,感测电流被有限地带电,以提高灵敏度和稳定化。

著录项

  • 公开/公告号JP4003442B2

    专利类型

  • 公开/公告日2007-11-07

    原文格式PDF

  • 申请/专利权人 ソニー株式会社;

    申请/专利号JP20010347804

  • 发明设计人 柿原 芳彦;

    申请日2001-11-13

  • 分类号H01L43/12;G01R33/09;G11B5/39;H01L43/08;

  • 国家 JP

  • 入库时间 2022-08-21 21:10:08

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