Dynamic memory, the sense amplifier circuit, the word line driving circuit, a control signal PX drive circuit, how to restore or signal sense, and leakage current reduction method

摘要

I will describe the method and circuit to reduce the leakage current in dynamic random access memory circuit element, to speed up access. Useful features of a large number are described. I illustrating a circuit for a sense amplifier that is improved is connected to a restore signal line and sense, using the complementary drain-transistors driven by a gate voltage of the voltage outside the range V _DD from V _SS. Drain-to-transistor is self reverse bias alone. Also, by changing the gate voltage restore sense and will be described a method of reducing the leakage current in the non-complementary sense amplifier. Employing cascaded control circuit and the pull-down transistor multi-stage, another feature of the present process is the word line of the new method negative. In addition, while discharging the control signal PX, is described prevent unwanted current of the power supply between the potential shift method.