The mono-silane derivative or the disilane derivative, and low temperature vapor deposition method of the silicon content membrane which uses that

摘要

For example as for this invention, low temperature for producing the ULSI device and the device structure (it regards the silicon precusor composition which forms the silicon content membrane 550C) with chemical vapor deposition method. This silicon precusor composition is substituted the alkyl hydrazine functional group 1 at least, there is no halogen substitution, at least the silane derivative or the disilane derivative of 1 kinds is included. Selective figure Figure 2