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LOW-REFLECTANCE PROCESSING METHOD OF SILICON SUBSTRATE FOR SOLAR CELLS AND SILICON SUBSTRATE FOR SOLAR CELL

机译:太阳电池硅基质的低反射率处理方法和太阳能电池硅基质的低反射率处理方法

摘要

PPROBLEM TO BE SOLVED: To provide a low-reflectance processing method of a silicon substrate for solar cells and a silicon substrate for solar cells capable of reducing the reflective index by stably forming fine unevenness on the surface of the silicon substrate of a single crystal or polycrystal used for solar cells. PSOLUTION: There is provided a method of processing the surface of a silicon substrate A of a single crystal or polycrystal used for solar cells with a low reflective index, having a first step of applying a roughening processing on the surface of the silicon substrate A by performing a chemical or physical processing; a second step of performing a first plasma treatment on the surface of the roughened silicon substrate A by using oxygen gas under vacuum; and a third step of forming fine unevenness on the surface of the roughened silicon substrate A by performing a second plasma treatment by using halogen gas under vacuum on the surface of the silicon substrate A that undergone the first plasma treatment. PCOPYRIGHT: (C)2007,JPO&INPIT
机译:解决的问题:提供一种用于太阳能电池的硅基板和用于太阳能电池的硅基板的低反射处理方法,该方法能够通过在硅基板的硅基板的表面上稳定地形成细小的凹凸来降低反射率。用于太阳能电池的单晶或多晶。

解决方案:提供一种处理具有低反射率的用于太阳能电池的单晶或多晶硅衬底A的表面的方法,该方法具有在硅表面上进行粗糙化处理的第一步。通过进行化学或物理处理的基板A;第二步骤,在真空下利用氧气对粗糙化的硅基板A的表面进行第一等离子体处理。第三步骤,通过在真空下在经过第一等离子体处理的硅基板A的表面上使用卤素气体进行第二等离子体处理,从而在粗糙化的硅基板A的表面上形成微细的凹凸。

版权:(C)2007,日本特许厅&INPIT

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