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Being the manner which forms the material structure which possesses the pattern to which the mannered null half pitch which forms the feature
Being the manner which forms the material structure which possesses the pattern to which the mannered null half pitch which forms the feature
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机译:作为形成材料结构的方式,该材料结构具有形成特征的呈零位的半间距的图案
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摘要
Lithographic imaging of 50 nm (or less) half-pitch features in chemically amplified resists (commonly used in the manufacture of integrated circuits) is enabled by the use of reduced temperature post-exposure processing and low activation energy chemically amplified resists. The post-exposure processing preferably involves ambient to moderately elevated temperature and the presence of a deprotection reaction-dependent co-reactant (e.g., water).
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