Being the reflected die mask blank for exposure which possesses the light absorption formation which the multilayer film equipped substrate, reflected die mask blank for exposure, possesses the multilayer

摘要

PROBLEM TO BE SOLVED: To provide a reflection mask for exposure which can make a transfer of a pattern in a lithography with high precision and is applicable also to EUV light with the very high flatness-surface of a multilayer film. SOLUTION: A stress correcting film 15 is formed for correcting a warpage, which is formed by a warpage in a substrate 11 and a stress in a multilayer film 12 and is formed in the surface of the film 12. The very high flatness- surface of the film 12 is obtained by correcting the warpage. A mask blank having this very high flatness-surface of the film 12 is manufactured and moreover, this mask blank is dry-etched, whereby a reflection type mask for exposure applicable also to EUV light is manufactured.