It was formed on first

摘要

PROBLEM TO BE SOLVED: To provide a new device structure that is realized by a technology with which a group-III nitride semiconductor can be easily processed.;SOLUTION: A semiconductor laser comprises a p-type GaN guide layer 307, a current constriction layer 308, which is an AlN layer, formed on the p-type GaN guide layer 307, and a p-type cladding layer 309 so formed as to embed an opening portion of the current constriction layer 308.;COPYRIGHT: (C)2006,JPO&NCIPI