Aluminum dope zinc oxide sintering body and its production manner and the application

摘要

PURPOSE: To stably form a low-resistance transparent conductive film even if the distance between a target and a substrate increases by specifying the density, grain size for sintering, max. dispersion and flocculation grain of the Al component, Al content and resistivity of a sintered compact. ;CONSTITUTION: The Al content of the conductive sintered compact obtd. by adding Al as a dopant to a zinc oxide sintered compact is specified to ≥0.5wt.% in terms of aluminum oxide. The sintering density of the sintered compact is specified to 5.6 to 5.77g/cm³ and the grain size for sintering to 2 to 50μm. The max. dispersion and flocculation diameter of the Al component in the sintered compact is confined to ≤5μm and the resistivity of the sintered compact to ≤1×10^-2Ωcm to improve the discharge stability as the target. The sintered compact is obtd. by mixing aluminum oxide and zinc oxide powders having a secondary flocculation grain size of ≤2μm and molding and sintering the mixture. The sintered compact has excellent performance as a sputtering target and is particularly high in film forming speed. The film having the high electrical conductivity and low resistance is thus obtd.;COPYRIGHT: (C)1995,JPO