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SELF-ALIGNED, SILICIDED, TRENCH-BASED DRAM/eDRAM PROCESSES WITH IMPROVED RETENTION
SELF-ALIGNED, SILICIDED, TRENCH-BASED DRAM/eDRAM PROCESSES WITH IMPROVED RETENTION
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机译:具有自我保留,简化,基于沟槽的DRAM / eDRAM工艺,保留时间得到改善
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摘要
A DRAM cell in a substrate has a deep trench (DT) extending from a surface of the substrate into the substrate, a word line (WL) formed on the surface of the substrate adjacent the deep trench, and oxide (TTO) disposed in a top portion of the trench and extending beyond the trench in the direction of the word line. In this manner, when silicided, there is oxide rather than silicon on the surface of the substrate in a gap between the word line (WL) and a passing word line (PWL) disposed above the deep trench.
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