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Integrated CMOS-MEMS technology for wired implantable sensors
Integrated CMOS-MEMS technology for wired implantable sensors
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机译:用于有线植入式传感器的集成CMOS-MEMS技术
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摘要
Disclosed are wired implantable integrated CMOS-MEMS sensors and fabrication methods. A first ceramic substrate comprising a biocompatible material such as fused silica is provided. A polysilicon layer is formed on the first substrate. An integrated circuit is fabricated adjacent to the surface of the first substrate. A passivation layer is formed on the integrated circuit. A conductive area is formed on the passivation layer that provides electrical communication with the integrated circuit. A feedthrough is formed through the first substrate that contacts the conductive area and provides for external electrical communication to the integrated circuit. A second ceramic substrate or cap comprising a biocompatible material is fused to the first substrate so as to form a cavity that encases the integrated circuit and form a sensor. The cavity is preferably a pressure cavity which cooperates to form a pressure sensor
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