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Integrated CMOS-MEMS technology for wired implantable sensors

机译:用于有线植入式传感器的集成CMOS-MEMS技术

摘要

Disclosed are wired implantable integrated CMOS-MEMS sensors and fabrication methods. A first ceramic substrate comprising a biocompatible material such as fused silica is provided. A polysilicon layer is formed on the first substrate. An integrated circuit is fabricated adjacent to the surface of the first substrate. A passivation layer is formed on the integrated circuit. A conductive area is formed on the passivation layer that provides electrical communication with the integrated circuit. A feedthrough is formed through the first substrate that contacts the conductive area and provides for external electrical communication to the integrated circuit. A second ceramic substrate or cap comprising a biocompatible material is fused to the first substrate so as to form a cavity that encases the integrated circuit and form a sensor. The cavity is preferably a pressure cavity which cooperates to form a pressure sensor
机译:公开了有线可植入集成CMOS-MEMS传感器和制造方法。提供了包括生物相容性材料例如熔融二氧化硅的第一陶瓷基板。在第一基板上形成多晶硅层。邻近第一基板的表面制造集成电路。钝化层形成在集成电路上。在钝化层上形成导电区域,该导电区域提供与集成电路的电连通。穿过第一基板形成与导电区域接触并提供到集成电路的外部电连通的馈通。将包含生物相容性材料的第二陶瓷基板或盖熔合到第一基板上,以形成包围集成电路并形成传感器的空腔。腔优选地是压力腔,其协作以形成压力传感器。

著录项

  • 公开/公告号US2007158769A1

    专利类型

  • 公开/公告日2007-07-12

    原文格式PDF

  • 申请/专利权人 LIANG YOU;

    申请/专利号US20060546852

  • 发明设计人 LIANG YOU;

    申请日2006-10-12

  • 分类号H01L29/84;

  • 国家 US

  • 入库时间 2022-08-21 21:07:06

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