Split gate field effect transistor device with aligned gate electrode sidewalls

摘要

A split gate field effect transistor is fabricated with a sidewall of a control gate electrode aligned with a sidewall of a floating gate electrode. The aligned sidewalls are on a side of the split gate field effect transistor device opposite the control gate electrode channel of the split gate field effect transistor device. The aligned sidewalls provide for enhanced performance of the split gate field effect transistor device.