Parameter extracting device and parameter extracting method in simulation, photomask created from parameter extracting method, and semiconductor device

摘要

The present invention provides a device for extracting optimum parameters in a simulation at high precision and in a short period of time. The present invention also provides a photomask created using the lithography parameters obtained from the device, and a semiconductor device. The device includes a parameter setting section for setting a plurality of parameters necessary in a simulation; a first parameter extracting section for extracting parameters adapted to the simulation through a genetic algorithm or a simulated annealing method from the plurality of set parameters; and a second parameter extracting section for registering the extracted parameters through a high precision parameter extracting method, and fitting the parameters at high precision.