首页>
外国专利>
Hydrogen treatment to improve photoresist adhesion and rework consistency
Hydrogen treatment to improve photoresist adhesion and rework consistency
展开▼
机译:氢处理可提高光刻胶的附着力和返工一致性
展开▼
页面导航
摘要
著录项
相似文献
摘要
A process for selectively removing photoresist, organic overlayers, and/or polymers/residues from a substrate without altering the surface chemistry and adhesion properties of the underlying substrate layers is provided. Generally, the process includes pretreating the substrate with hydrogen (e.g., by way of a hydrogen-based plasma) prior to deposition of a photoresist layer, and then ashing the substrate with a hydrogen-based plasma to selectively remove the photoresist, organic overlayers, and/or polymers/residues from the substrate during etching, post-etch, rework, etc. The hydrogen-based ashing process of the invention may be used post-etch to remove the residue photoresist, or may be used in a rework stripping process to remove misaligned patterns. The hydrogen-based ashing process following the initial hydrogen surface pretreatment substantially reduces surface chemistry poisoning, while retaining adequate adhesion properties following ashing.
展开▼