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METHOD OF SIMULTANEOUSLY CONTROLLING ADI-AEI CD DIFFERENCES OF OPENINGS HAVING DIFFERENT SIZES AND ETCHING PROCESS UTILIZING THE SAME METHOD
METHOD OF SIMULTANEOUSLY CONTROLLING ADI-AEI CD DIFFERENCES OF OPENINGS HAVING DIFFERENT SIZES AND ETCHING PROCESS UTILIZING THE SAME METHOD
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机译:同时控制具有不同尺寸和蚀刻过程的开口的ADI-AEI CD差异的方法
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摘要
A method of simultaneously controlling the ADI-AEI CD differences of openings having different sizes is disclosed. The openings are formed by: forming an ARC and a photoresist layer with a first and a second opening patterns of different sizes therein on a material layer, and etching the ARC and the material layer with the photoresist layer as a mask to form in the material layer a first/second opening corresponding to the first/second opening pattern, wherein the etching recipe makes the first/second opening smaller than the first/second opening pattern by a first/second size difference (ΔS1/ΔS2) and the difference between ΔS1 and ΔS2 is a relative size difference. The method is characterized by that an etching parameter affecting the relative size difference is set at a first value in etching the ARC and at a second value different from the first value in etching the material layer.
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