首页> 外国专利> Apparatus employing predictive failure analysis based on in-circuit FET on-resistance characteristics

Apparatus employing predictive failure analysis based on in-circuit FET on-resistance characteristics

机译:基于在线FET导通电阻特性进行预测性故障分析的设备

摘要

A computing system includes a semiconductor which sources/sinks current to/from components within the system, an in-circuit semiconductor on-resistance characterization circuit which measures the on-resistance of the semiconductor, and a processor which periodically or continuously engages the characterization circuit over the life of the semiconductor to obtain a series of on-resistance measurements. Depending on the type of semiconductor used, or depending on arbitrary design limitations, the computing system predicts semiconductor failure based on either a relative mode or an absolute mode. The relative mode is useful when using FET's since on-resistance values vary significantly. In the relative mode, an optional NVRAM is used to store one or more on-resistance measurements which may serve as a reference for assuring proper circuit operation within tolerable deviations from the reference. In the absolute mode, one or more optional thresholds are utilized to assure that circuit operation remains in a known good region.
机译:一种计算系统,包括:半导体,其向/从系统中的组件提供电流/从系统中的组件汲取电流;电路内半导体导通电阻表征电路,其测量半导体的导通电阻;以及处理器,其周期性地或连续地接合表征电路在半导体的整个寿命中获得一系列导通电阻测量值。根据所使用的半导体类型或任意设计限制,计算系统会根据相对模式或绝对模式预测半导体故障。当使用FET时,相对模式非常有用,因为导通电阻值会发生很大变化。在相对模式下,可选的NVRAM用于存储一个或多个导通电阻测量值,这些测量值可用作参考值,以确保在参考值可容忍的偏差范围内正确地运行电路。在绝对模式下,利用一个或多个可选阈值来确保电路操作保持在已知良好区域内。

著录项

  • 公开/公告号US2006265158A1

    专利类型

  • 公开/公告日2006-11-23

    原文格式PDF

  • 申请/专利权人 JUSTIN POTOK BANDHOLZ;

    申请/专利号US20050124940

  • 发明设计人 JUSTIN POTOK BANDHOLZ;

    申请日2005-05-09

  • 分类号G01R25/00;G01R27/00;

  • 国家 US

  • 入库时间 2022-08-21 21:02:37

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号