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Low capacitance two-terminal barrier controlled TVS diodes

机译:低电容两端势垒控制TVS二极管

摘要

A two-terminal barrier controlled TVS diode has a depletion region barrier blocking majority carrier flow through the channel region at the vicinity of the cathode region at bias levels below the predetermined clamping voltage applied between the anode electrode and the cathode electrode, and may be arranged such that the anode region provides conductivity modulation by injecting minority carriers into the channel region during conduction of the semiconductor structure. In presently preferred form the majority carriers are electrons and the minority carriers are holes. Fabrication methods are described.
机译:两端子势垒控制的TVS二极管具有耗尽区势垒,该势垒区以低于施加在阳极电极和阴极电极之间的预定钳位电压的偏置水平来阻止大部分载流子流过阴极区附近的沟道区。因此,通过在半导体结构的传导期间将少数载流子注入到沟道区域中,阳极区域提供了电导率调制。在目前的优选形式中,多数载流子是电子,而少数载流子是空穴。描述了制造方法。

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