Phase-change memory element driver circuits using measurement to control current and methods of controlling drive current of phase-change memory elements using measurement

摘要

Programming phase-change memory devices and driver circuits for programming phase-change memory devices are provided that control an amount of current supplied to a phase-change material of the phase-change memory device based on a measure of resistance of the phase-change material during programming of the phase-change memory device. Such control may be based on detected voltage or current. The amount of current supplied to the phase-change material may be increased until the measured voltage level changes with respect to a reference voltage value and the current maintained constant if the measured voltage level has changed with respect to the reference voltage value. The change of the measured voltage level with respect to the reference voltage may be the measured voltage level falling below the reference voltage value.