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Spin valve structure with Si seed layer and reduced PtMn antiferromagnetic layer thickness
Spin valve structure with Si seed layer and reduced PtMn antiferromagnetic layer thickness
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机译:具有Si籽晶层和减小的PtMn反铁磁层厚度的自旋阀结构
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摘要
A magnetic head having a spin valve sensor that is fabricated utilizing an Al2O3, NiMn0, Si seed layer upon which a PtMn spin valve sensor layer structure is subsequently fabricated. In the preferred embodiment, the Si layer has a thickness of approximately 20 Å and the PtMn layer has a thickness of approximately 120 Å. An alternative fabrication process of the Si layer includes the overdeposition of the layer to a first thickness of from 15 Å to 45 Å followed by the etching back of the seed layer of approximately 5 Å to approximately 15 Å to its desired final thickness of approximately 20 Å. The Si layer results in an improved crystal structure to the subsequently fabricated PtMn and other spin valve sensor layers, such that the fabricated spin valve is thinner and exhibits increased ΔR/R and reduced coercivity.
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机译:一种具有自旋阀传感器的磁头,该自旋阀传感器是利用Al 2 Sub> O 3 Sub>,NiMn0,Si籽晶层制造的,随后在其上制造了PtMn自旋阀传感器层结构。在最佳实施例中,Si层的厚度约为20埃,而PtMn层的厚度约为120埃。硅层的另一种制造工艺包括将硅层过沉积到15到45的第一厚度,然后回蚀大约5到15的籽晶层,使其最终最终厚度约为20一种。 Si层导致随后制造的PtMn和其他自旋阀传感器层的改善的晶体结构,使得所制造的自旋阀更薄并且表现出增加的ΔR/ R和降低的矫顽力。
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