首页>
外国专利>
Antiferromagnetically stabilized pseudo spin valve for memory applications
Antiferromagnetically stabilized pseudo spin valve for memory applications
展开▼
机译:用于存储应用的反铁磁稳定伪自旋阀
展开▼
页面导航
摘要
著录项
相似文献
摘要
The invention relates to improving the switching reliability of a magnetic memory cell in a magnetic random access memory (MRAM). Embodiments of the invention add an antiferromagnet to a magnetic memory cell. An antiferromagnetic layer can be formed adjacent to a soft layer in the MRAM on a side of the soft layer that is opposite to a hard layer of the MRAM. One embodiment further includes an additional interlayer of non-antiferromagnetic material between the antiferromagnetic layer and the soft layer.
展开▼