首页> 外国专利> Parabolic waveguide-type collimating lens and tunable external cavity laser diode provided with the same

Parabolic waveguide-type collimating lens and tunable external cavity laser diode provided with the same

机译:抛物线波导型准直透镜和具有该准直透镜的可调外腔激光二极管

摘要

The present invention relates to a semiconductor based parabolic waveguide-type collimating lens and a monolithically integrated type tunable external cavity laser diode light source. The monolithically integrated type tunable external cavity laser diode light source includes a gain medium for generating a gain of an optical signal, a collimating lens for correcting an divergent light beam to a parallel light beam, a passive waveguide through which the parallel light beam travels, an optical deflector to change a traveling direction of the parallel light beam changing a refractive index of medium on a traveling path of the parallel light beam traveling through the slab waveguide in response to an external electric signal and a diffraction grating to diffract the parallel light beam passing through the optical deflector, wherein these are integrate into one substrate made of an InP-based semiconductor as well as a material such as a GaAs-based semiconductor, a Si-based semiconductor, LiNbO3-based semiconductor or the like.
机译:本发明涉及基于半导体的抛物线波导型准直透镜和单片集成型可调外腔激光二极管光源。单片集成型可调外腔激光二极管光源包括:增益介质,用于产生光信号的增益;准直透镜,用于将发散光束校正为平行光束;无源波导,平行光束通过该无源波导;光学偏转器,用于响应于外部电信号而改变平行光束的行进方向,从而改变介质在穿过平板波导的平行光束的行进路径上的折射率;以及衍射光栅,用于衍射平行光束穿过光偏转器,其中这些光偏转器集成到一个由InP基半导体以及诸如GaAs基半导体,Si基半导体,LiNbO 3 基等材料制成的衬底中半导体等。

著录项

  • 公开/公告号US7174068B2

    专利类型

  • 公开/公告日2007-02-06

    原文格式PDF

  • 申请/专利权人 HYUN-SOO KIM;EUN DEOK SIM;

    申请/专利号US20050290295

  • 发明设计人 HYUN-SOO KIM;EUN DEOK SIM;

    申请日2005-11-30

  • 分类号G02B6/32;

  • 国家 US

  • 入库时间 2022-08-21 20:59:49

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