NEW IGBT CATHODE DESIGN WITH IMPROVED SAFE OPERATING AREA CAPABILITY

摘要

In an insulated gate bipolar transistor, an improved safe operating area capability is achieved according to the invention by a two-fold base region comprising a first base region (81), which is disposed in the channel region (7) so that it encompasses the one or more source regions (6), but does not adjoin the second main surface underneath the gate oxide layer (41), and a second base region (82) is disposed in the semiconductor substrate (2) underneath the base contact area (821) so that it partially overlaps with the channel region (7) and with the first base region (81).