首页> 外国专利> A METHOD OF CARRYING OUT A SURFACE PLASMON RESONANCE (SPR) MEASUREMENT USING A SURFACE PLASMON RESONANCE DEVICE

A METHOD OF CARRYING OUT A SURFACE PLASMON RESONANCE (SPR) MEASUREMENT USING A SURFACE PLASMON RESONANCE DEVICE

机译:一种使用表面等离子体共振装置进行表面等离子体共振(SPR)测量的方法

摘要

This invention relates to an optical phenomena that concerns with the resonant excitation iif of "Surface Charge Density" wave (also referred to as surface plasmon wave), at the I interface of highly conducting metal and insulating sample materials, using a 'total I internally reflecting p type polarized' light wave.In this invention the authors claims of a new SPR parameter that can be of fundamental importance for the study and analysis of the SPR phenomena as well as the devices that work based on the SPR effect. For convenience, it is designated as '4 K'. it is shown that the angle of incidence and the reflectance values of every point on the SPR spectrum when mapped into corresponding new state parameters ,~8, and 'L' respectively the new SPR parameter '4K' provides a simple link between them and the resulting explicit expression ~8 2 =.1/ L K R (~8) is proposed as a new formalism for the Plasmon Resonance Curve. The advantage of the proposed new parameter is that it provides a simple connection between the real and the imaginary parts of the metal dielectric function and can be estimated from the spectrum without the need for a curve fitting procedure as well as actual thickness of the metal film. Its knowledge can be of immense use in study of optical properties of ultra thin metal films as well as in the study of absorption properties of the ultra thin absorbed overlayers of samples on the metal surface. It also facilitates, inversion of device reflectance into its corresponding angular detune with utmost ease and lifts the need for expensive angle measuring gadgets or persona D1Puters in displacement measunng applications.
机译:本发明涉及一种光学现象,该光学现象涉及在高导电金属和绝缘样品材料的I界面上使用“总I”在内部的“表面电荷密度”波(也称为表面等离振子波)的共振激发iif。在本发明中,作者要求一种新的SPR参数,该参数对于研究和分析SPR现象以及基于SPR效应的器件至关重要。为了方便起见,将其指定为“ 4 K”。结果表明,当映射到相应的新状态参数〜8和“ L”时,SPR光谱上每个点的入射角和反射率值分别为新的SPR参数“ 4K”提供了它们之间的简单链接。提出的结果明确表达式〜8 2 = .1 / LKR(〜8)作为等离振子共振曲线的新形式。所提出的新参数的优点在于,它提供了金属介电函数的实部和虚部之间的简单连接,并且可以从光谱中进行估算,而无需进行曲线拟合程序以及金属膜的实际厚度。它的知识在研究超薄金属膜的光学特性以及研究金属表面上样品的超薄吸收叠层的吸收特性方面有巨大的用途。它还最大程度地简化了将设备反射率转换为其相应的角度失谐的过程,并且在位移测量应用中不再需要昂贵的角度测量工具或角色D1Puter。

著录项

  • 公开/公告号IN200959B

    专利类型

  • 公开/公告日2007-02-23

    原文格式PDF

  • 申请/专利权人

    申请/专利号IN501/MAS/1999

  • 发明设计人 DR. L. KAMESWARA RAO;

    申请日1999-04-29

  • 分类号G01N1/00;

  • 国家 IN

  • 入库时间 2022-08-21 20:57:27

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