TECHNIQUE OF SINGLE-CRYSTALLINE SILICONE SURFACE PASSIVATION

摘要

The invention proposes a technique of single-crystalline silicon surface passivation. The technique includes an illumination of silicon oxide from its surface; laying of an oxide film and activation of silicon-film interface. Natural silicon oxide isilluminated by means of etching of silicon surface in 25-50 % HF solution in extend of 3-10 min. at the room temperature. Laying of oxide film and activation of silicon-film interface is conducted in one stage using laser deposition of Al2O3 film, which includes Si nano-crystals from back flow of erosive flame by means of disposition of a lining in target surface. The lining is locate at the distance of 5-10 mm from flame axis in vacuum chamber under pressure of 10-15 Pa with usage of the silicon target, which contains 2-4 % of gold and aluminum on surface. It is affected on the target with laser impulses IA? :Nd3+ , the wave length being 1,06 mkm, , the energy density of impulse - 20-25 Dj/cm2, the pulse duration - 8-12 ns with frequency 20-30 Hz.