首页> 外国专利> POSITIVE PHOTORESIST COMPOSITION, THICK LAYERED PHOTORESIST, PROCESS FOR PRODUCING THICK RESIST PATTERN, AND PROCESS FOR PRODUCING CONNECTING TERMINAL

POSITIVE PHOTORESIST COMPOSITION, THICK LAYERED PHOTORESIST, PROCESS FOR PRODUCING THICK RESIST PATTERN, AND PROCESS FOR PRODUCING CONNECTING TERMINAL

机译:正性光致抗蚀剂组合物,厚层状光致抗蚀剂,生产厚抗性图案的过程以及连接端子的过程

摘要

A positive photoresist composition which can form a thick resist pattern having high sensitivity. The positive photoresist composition comprises (A) a compound which generates an acid upon irradiation with actinic rays or a radiation and (B) a resin whose alkali solubility increases by the action of an acid, wherein the ingredient (B) comprises a resin (B1) having a constituent unit (b1) which is a constituent unit derived from an acrylic ester and in which the hydrogen atom of the carboxy group has been replaced with an acid-dissociable dissolution-inhibitive group represented by the following general formula (I). [Chemical formula 1] (I) [In the formula, Y represents an optionally substituted alicyclic group or alkyl; n is an integer of 0-3; and R1 and R2 each independently represents hydrogen or C1-5 alkyl.]
机译:可以形成具有高灵敏度的厚抗蚀剂图案的正性光刻胶组合物。所述正性光致抗蚀剂组合物包含(A)在光化射线或放射线照射下产生酸的化合物,和(B)通过酸的作用而碱溶性增加的树脂,其中成分(B)包括树脂(B1)。 )具有构成单元(b1),该构成单元(b1)是衍生自丙烯酸酯的构成单元,并且其中羧基的氢原子已被下述通式(I)表示的酸可解离的溶解抑制基团代替。 [化学式1](I)[式中,Y表示任选取代的脂环族基团或烷基。 n是0-3的整数; R 1和R 2各自独立地表示氢或C 1-5烷基。]

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