The present invention relates to a method of simulating a post-exposure-bake (PEB) process in a lithographic procedure to obtain a concentration distribution M as a concentration dependent on location x and time t of an inhibitor in a photoresist that comprises at least one acid, a quencher and an inhibitor and is applied to a wafer, with the following steps: preparing an initial concentration A0, Q0 and M0 respectively of an acid, a base and an inhibitor; determining the concentration distribution M of the inhibitor, A of the acid and Q of the base from a chemical potential µ, which is obtained as a solution of a parabolic variational inequality based on at least one of the prepared initial concentrations A0, Q0 and M0.
展开▼
